MOTOROLA摩托罗拉MTW16N40E DATA SHEET说明书.PDF

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查询MTW16N40E供应商OrderthisdocumentSEMICONDUCTORTECHNICALDATAbyMTW16N40E/DMotorolaPreferredDevice"'#%#!$$%"#'%$"%"&!%!"TMOSPOWERFETN–ChannelEnhancement–ModeSiliconGate16AMPERES400VOLTSThishighvoltageMOSFETusesanadvancedterminationRDS(on)=0.24OHMschemetoprovideenhancedvoltage–blockingcapabilitywithoutdegradingperformanceovertime.Inaddition,thisadvancedTMOSE–FETisdesignedtowithstandhighenergyintheavalancheandcommutationmodes.Thenewenergyefficientdesignalsooffersadrain–to–sourcediodewithafastrecoverytime.Designedforhighvoltage,highspeedswitchingapplicationsinpowersupplies,convertersandPWMmotorcontrols,thesedevicesareparticularlywellsuitedforbridgecircuitswherediodespeedandcommutatingsafeoperatin

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