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GateDriverDesignfor1.7kVSiCMOSFETModulewithRogowskiCurrensorforShortcircuitJunWang,ZhiyuShen,ChristinaDiMarino,RolandoBurgos,DushanBoroyevichCenterforPowerElectronicsSystemsVirginiaPolytechnicInstituteandStateUniversityBlacksburg,VA24061,USAjunwang@vt.eduAbstract—Thispapershowsagatedriverdesignfor1.7kVTABLEI.SiCMOSFETandGateDriverSpecificationsSiCMOSFETmoduleaswellaRogowski-coilbasedcurrentExampledevicepartnumberCreeCAS300M17BM2sensorforeffectiveshortcircuit.ThedesignbeginsDevicevoltagerating1700Vwiththepowerarchitectureselectionforbettercommon-modeDevicecurrentrating225A@T=90CCnoiseimmuasthedriverissubjectedtohighdv/dtduetotheGatechargerequired1076nCveryhighswitchingspeedoftheSiCMOSFETmodules.TheDevicePackage62mmselectionofthemostappropriategatedriverICistoumswitchingfrequency100kHzensure