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Faculty of Materials and Energy, GDUT * Faculty of Materials and Energy, Guangdong University of Technology Chapter 3: Fabrication, Layout and Simulation Digital Integrated Circuits Faculty of Materials and Energy, GDUT * Outline CMOS 工艺流程 集成电路版图基础 Digital Integrated Circuits Faculty of Materials and Energy, GDUT * 主要的CMOS工艺 P阱工艺 N阱工艺 双阱工艺 P- P+ P+ N+ N+ P+ N+ VSS VOUT VIN VDD N- P+ P+ N+ N+ P+ N+ VSS VOUT VIN VDD P- P+ P+ N+ N+ P+ N+ VSS VOUT VIN N-Si P-Si N- I-Si N+-Si Digital Integrated Circuits Faculty of Materials and Energy, GDUT * P阱硅栅CMOS工艺 N型衬底 p+ gate oxide p+ gate oxide oxide N+ N+ P阱 衬底选择： 确定衬底材料类型： N型硅 确定衬底材料电阻率： ρ≈10Ω.cm 确定衬底材料晶向： （100）晶向 （111）面的原子密度更大，所以更容易生长。生长成本最低，适合双极器件。 （100）面的表面状态有利于控制MOS器件开态和关态所需求的阈值电压。 Digital Integrated Circuits Faculty of Materials and Energy, GDUT