FIR4N65BPG,650V 4A_商品编号C94683_立创商城.PDF

想预览更多内容,点击预览全文

申明敬告:

本站所有内容均由合作方或网友上传,本站不对文档的完整性、权威性及其观点立场正确性做任何保证或承诺!文档内容仅供研究参考,付费前请自行鉴别。如您付费,意味着您自己完全接受本站规则且自行承担所有风险,本站不退款、不进行额外附加服务;如果您已付费下载过本站文档,您可以点击这里二次下载

文档介绍

FIR4N65BPG Advanced N-Ch Power MOSFET PIN Connection TO-251(I-PAK) GeneralDescription FIR4N65BPGis an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology. The improved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state 1 2 3 resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. -- 2 These devices are widely used in AC-DC power suppliers, DC DC converters and H-bridge PWM motor drivers. 1 Features 3 • 4A,650V,R ( )=2.3 Ω@V =10V DS(on) typ GS • Low gate charge • Low Crss Marking Diagram • Fast switching • Improved dv/dt capability Y = Year YAWW A = Assembly Location FIR4N65BP WW = Wo

最近下载