文档介绍
FIR4N65BPG Advanced N-Ch Power MOSFET PIN Connection TO-251(I-PAK) GeneralDescription FIR4N65BPGis an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology. The improved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state 1 2 3 resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. -- 2 These devices are widely used in AC-DC power suppliers, DC DC converters and H-bridge PWM motor drivers. 1 Features 3 • 4A,650V,R ( )=2.3 Ω@V =10V DS(on) typ GS • Low gate charge • Low Crss Marking Diagram • Fast switching • Improved dv/dt capability Y = Year YAWW A = Assembly Location FIR4N65BP WW = Wo